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| SI7900EDN New Product Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.026 @ VGS = 4.5 V 20 0.031 @ VGS = 2.5 V 0.039 @ VGS = 1.8 V ID (A) 9 8 7 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPakt Package - Low-Thermal Resistance, RthJC - Low 1.07-mm Profile D 3000-V ESD Protection APPLICATIONS D Protection Switch for 1-2 Li-ion Batteries D D PowerPAKt 1212-8 3.30 mm S1 1 2 3 G1 S2 3.30 mm 2.4 kW G2 4 2.4 kW G2 G1 D 8 7 6 5 D D D S1 N-Channel N-Channel S2 Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS 10 secs 20 "12 9 Steady State Unit V 6 4.3 30 A 1.4 1.5 0.79 -55 to 150 W _C ID IDM IS PD TJ, Tstg 6.4 2.9 3.2 1.7 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71425 S-03369--Rev. A, 02-Apr-01 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 30 65 1.9 Maximum 38 82 2.4 Unit _C/W C/W 1 SI7900EDN Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "4.5 V Gate-Body Leakage VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = 16 V, VGS = 0 V, TJ = 85_C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 6.5 A Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 5.8 A VGS = 1.8 V, ID = 5.0 A Forward Transconductancea gfs VSD VDS = 10 V, ID = 6.5 A IS = 1.5 A, VGS = 0 V 20 0.021 0.025 0.031 25 0.65 1.1 0.026 0.031 0.039 S V W 0.40 "1 "10 1 20 V mA mA mA m A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 6.5 A 12.5 2.7 2.7 0.7 1.3 5.5 4.6 1.0 2.0 8.0 7.0 ms m 18 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 8 10,000 Gate Current vs. Gate-Source Voltage 1,000 I GSS - Gate Current (mA) 6 I GSS - Gate Current (mA) 100 TJ = 150_C 4 10 1 0.1 TJ = 25_C 2 0 0 3 6 9 12 15 18 0.01 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71425 S-03369--Rev. A, 02-Apr-01 2 SI7900EDN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 25_C 18 18 125_C 12 30 TC = -55_C Vishay Siliconix Transfer Characteristics 12 1.5 V 6 6 0 0 2 4 6 8 10 12 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.06 2500 Capacitance r DS(on) - On-Resistance ( W ) 0.05 C - Capacitance (pF) 2000 Ciss 1500 0.04 VGS = 1.8 V 0.03 VGS = 2.5 V VGS = 4.5 V 0.02 1000 Coss 0.01 500 Crss 0 4 8 12 16 20 0.00 0 6 12 18 24 30 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 9 A 1.8 On-Resistance vs. Junction Temperature r DS(on) - On-Resistance (W) (Normalized) 4 1.6 VGS = 4.5 V ID = 9 A 1.4 3 1.2 2 1.0 1 0.8 0 0 3 6 9 12 15 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71425 S-03369--Rev. A, 02-Apr-01 www.vishay.com 3 SI7900EDN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.08 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 10 I S - Source Current (A) TJ = 150_C 0.06 ID = 9 A 0.04 TJ = 25_C 0.02 1 0 0.4 0.6 0.8 1.0 1.2 0.00 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 0.2 60 V GS(th) Variance (V) -0.0 Power (W) 80 Single Pulse Power, Junction-to-Ambient 40 -0.2 20 -0.4 -0.6 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 65_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71425 S-03369--Rev. A, 02-Apr-01 SI7900EDN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Vishay Siliconix 0.02 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 Square Wave Pulse Duration (sec) 0.1 1 Document Number: 71425 S-03369--Rev. A, 02-Apr-01 www.vishay.com 5 |
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